منابع مشابه
High dielectric constant oxides
The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...
متن کاملfaculty of psychology and social sciences group of anthropology master thesis in major of anthropology
چکیده پایان نامه (شامل خلاصه، اهداف، روش های اجرا و نتایج به دست آمده): کار جمع آوری گو یش های محلی در سال های اخیر شتاب امیدوار کننده ای به خود گرفته است. شاید از بارزترین اهداف جمع آوری گویش های مختلف، ثبت و ضبط آن، جلوگیری از نابودی و مهمتر از همه حل مشکلات دستوری زبان رسمی باشد. دقت در فرآیند های زبانی گویش های محلی نوع ارتباط مردم نواحی مختلف با پیرامون نشان را به ما نشان خواهد داد. از س...
The effective parameters on thermal recovery and reduction of iron oxides in EAF slag
Steelmaking slag of Mobarakeh Steel Company (MSC) has a high iron content which makes it unsuitable for conventional slag recovery; as in cement industries. On the other hand, EAF slag in this company is almost free of zinc because of using more than 90 percent DRI in the charge. Therefore, removal or recovery of iron from the slag can be a suitable solution to slag recovery in this company. In...
متن کاملHigh mobility annealing of Transparent Conductive Oxides
To improve electrical properties a high temperature annealing treatment was applied to several transparent conductive oxides (TCO), namely tin doped indium oxide (ITO), Gaor Aldoped ZnO (ZnO:Al/Ga), ion beam assisted deposited (IBAD) ZnO:Ga and Ga doped zinc magnesium oxide (ZnMgO:Ga). All these films were grown by magnetron sputtering. During the annealing process all TCO films were capped wit...
متن کاملStability of xenon oxides at high pressures.
Xenon, which is quite inert under ambient conditions, may become reactive under pressure. The possibility of the formation of stable xenon oxides and silicates in the interior of the Earth could explain the atmospheric missing xenon paradox. Using an ab initio evolutionary algorithm, we predict the existence of thermodynamically stable Xe-O compounds at high pressures (XeO, XeO(2) and XeO(3) be...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Magnetics
سال: 1991
ISSN: 0018-9464,1941-0069
DOI: 10.1109/20.133308